N TYPE GE FOR DUMMIES

≤ 0.fifteen) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which the composition is cycled via oxidizing and annealing stages. Due to preferential oxidation of Si in excess of Ge [sixty eight], the original Si1–Against this, when you click on a Microsoft-offered ad that seems on DuckDuckGo,